Source: IEEE. Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF
Subjects: FÍSICO-QUÍMICA, FOTODETECTORES, EPITAXIA POR FEIXE MOLECULAR, ELETRÔNICA QUÂNTICA, FILMES FINOS, SEMICONDUTIVIDADE
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AL ZEIDAN, Ahmad et al. Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector. IEEE. New York: IEEE-Institute of Electrical and Electronics Engineers. Disponível em: https://doi.org/10.1109/SBMicro.2019.8919349. Acesso em: 09 maio 2024. , 2019APA
Al Zeidan, A., Cantalice, T. F. de, Garcia, A. J., Deneke, C. F., & Quivy, A. A. (2019). Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector. IEEE. New York: IEEE-Institute of Electrical and Electronics Engineers. doi:10.1109/SBMicro.2019.8919349NLM
Al Zeidan A, Cantalice TF de, Garcia AJ, Deneke CF, Quivy AA. Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector [Internet]. IEEE. 2019 ;04.[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919349Vancouver
Al Zeidan A, Cantalice TF de, Garcia AJ, Deneke CF, Quivy AA. Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector [Internet]. IEEE. 2019 ;04.[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919349